K6F1616V6B-EF550 vs AS6C1616A-55BIN feature comparison

K6F1616V6B-EF550 Samsung Semiconductor

Buy Now Datasheet

AS6C1616A-55BIN Alliance Memory Inc

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ALLIANCE MEMORY INC
Part Package Code BGA BGA
Package Description VFBGA, VFBGA, BGA48,6X8,30
Pin Count 48 48
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
JESD-30 Code S-PBGA-B48 R-PBGA-B48
Length 7 mm 10 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape SQUARE RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm 1 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 7 mm 8 mm
Base Number Matches 1 1
Pbfree Code Yes
Samacsys Manufacturer Alliance Memory
I/O Type COMMON
Moisture Sensitivity Level 3
Output Characteristics 3-STATE
Output Enable YES
Package Equivalence Code BGA48,6X8,30
Peak Reflow Temperature (Cel) 260
Standby Current-Max 0.000008 A
Standby Voltage-Min 1.5 V
Supply Current-Max 0.008 mA
Time@Peak Reflow Temperature-Max (s) 40

Compare K6F1616V6B-EF550 with alternatives

Compare AS6C1616A-55BIN with alternatives