K7R163682B-FI250 vs UPD44165364AF5-E50-EQ2 feature comparison

K7R163682B-FI250 Samsung Semiconductor

Buy Now Datasheet

UPD44165364AF5-E50-EQ2 Renesas Electronics Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC RENESAS ELECTRONICS CORP
Part Package Code BGA BGA
Package Description LBGA,
Pin Count 165 165
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 18874368 bit 18874368 bit
Memory IC Type QDR SRAM STANDARD SRAM
Memory Width 36 36
Number of Functions 1
Number of Terminals 165 165
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 512KX36 512KX36
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm
Base Number Matches 1 3
Clock Frequency-Max (fCLK) 200 MHz
I/O Type SEPARATE
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Standby Current-Max 0.26 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.58 mA

Compare K7R163682B-FI250 with alternatives

Compare UPD44165364AF5-E50-EQ2 with alternatives