K7R641884M-FI250 vs GS8672D18BGE-250IT feature comparison

K7R641884M-FI250 Samsung Semiconductor

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GS8672D18BGE-250IT GSI Technology

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC GSI TECHNOLOGY
Part Package Code BGA BGA
Package Description LBGA, BGA165,11X15,40 LBGA, BGA165,11X15,40
Pin Count 165 165
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE PIPELINE ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 17 mm 17 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type QDR SRAM STANDARD SRAM
Memory Width 18 18
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.5 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 15 mm 15 mm
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Supply Current-Max 1 mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare GS8672D18BGE-250IT with alternatives