KF5N50D
vs
IXTV5N50P
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
KEC CORP
|
IXYS CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
270 mJ
|
250 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
4.3 A
|
4.8 A
|
| Drain-source On Resistance-Max |
1.4 Ω
|
1.4 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
13 A
|
10 A
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare KF5N50D with alternatives
Compare IXTV5N50P with alternatives