IXTV5N50P
IXYS Corporation
Description: Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of IXTV5N50P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IXTV5N50P by IXYS Corporation
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Part Data Attributes for IXTV5N50P by IXYS Corporation

IXTV5N50P
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
IXYS CORP
Package Description
IN-LINE, R-PSIP-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
250 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.8 A
Drain-source On Resistance-Max
1.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTV5N50P
    IXYS Corporation
    Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

Alternate Parts for IXTV5N50P

This table gives cross-reference parts and alternative options found for IXTV5N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTV5N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
UF830L-TN3-R Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd IXTV5N50P vs UF830L-TN3-R
IRF830AJ69Z Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IXTV5N50P vs IRF830AJ69Z
UF830L-TQ2-R Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd IXTV5N50P vs UF830L-TQ2-R
FDP5N50F Power Field-Effect Transistor, 4.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Fairchild Semiconductor Corporation IXTV5N50P vs FDP5N50F
KF5N50D Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 KEC IXTV5N50P vs KF5N50D
KF5N50DZ Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK(1)-3 KEC IXTV5N50P vs KF5N50DZ
SFF430Z Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) IXTV5N50P vs SFF430Z
STB5NK52ZD-1 4.4A, 520V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-2 STMicroelectronics IXTV5N50P vs STB5NK52ZD-1
STP5NK52ZD N-channel 520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK STMicroelectronics IXTV5N50P vs STP5NK52ZD
TSM5ND50CHC5 Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Taiwan Semiconductor IXTV5N50P vs TSM5ND50CHC5

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