There are no models available for this part yet.
Overview of IXTV5N50P by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IXTV5N50P by IXYS Corporation
Part Data Attributes for IXTV5N50P by IXYS Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
IXYS CORP
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
250 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
4.8 A
|
Drain-source On Resistance-Max
|
1.4 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
10 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IXTV5N50P
This table gives cross-reference parts and alternative options found for IXTV5N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTV5N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UF830L-TN3-R | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | IXTV5N50P vs UF830L-TN3-R |
IRF830AJ69Z | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXTV5N50P vs IRF830AJ69Z |
UF830L-TQ2-R | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IXTV5N50P vs UF830L-TQ2-R |
FDP5N50F | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXTV5N50P vs FDP5N50F |
KF5N50D | Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | KEC | IXTV5N50P vs KF5N50D |
KF5N50DZ | Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK(1)-3 | KEC | IXTV5N50P vs KF5N50DZ |
SFF430Z | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IXTV5N50P vs SFF430Z |
STB5NK52ZD-1 | 4.4A, 520V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-2 | STMicroelectronics | IXTV5N50P vs STB5NK52ZD-1 |
STP5NK52ZD | N-channel 520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK | STMicroelectronics | IXTV5N50P vs STP5NK52ZD |
TSM5ND50CHC5 | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Taiwan Semiconductor | IXTV5N50P vs TSM5ND50CHC5 |