KSH44H11-I
vs
MJD44H11-1G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
IN-LINE, R-PSIP-T3
|
ROHS COMPLIANT, DPAK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
8 A
|
8 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
40
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
50 MHz
|
50 MHz
|
| VCEsat-Max |
1 V
|
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
No
|
| Pin Count |
|
3
|
| Case Connection |
|
COLLECTOR
|
| JESD-609 Code |
|
e0
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare KSH44H11-I with alternatives
Compare MJD44H11-1G with alternatives