LBAL99WT3G
vs
BAV16L
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Package Description |
R-PDSO-G3
|
R-PBCC-N2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Application |
GENERAL PURPOSE
|
FAST RECOVERY
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.855 V
|
1.25 V
|
| JESD-30 Code |
R-PDSO-G3
|
R-PBCC-N2
|
| Non-rep Pk Forward Current-Max |
2 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Power Dissipation-Max |
0.2 W
|
0.2 W
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
| Breakdown Voltage-Min |
|
75 V
|
| Reverse Current-Max |
|
1 µA
|
| Reverse Test Voltage |
|
75 V
|
|
|
|
Compare LBAL99WT3G with alternatives
Compare BAV16L with alternatives