LBSS123LT1G
vs
SI1031R-T1-GE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
End Of Life
|
Ihs Manufacturer |
LESHAN RADIO CO LTD
|
VISHAY SILICONIX
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
20 V
|
Drain Current-Max (ID) |
0.17 A
|
0.14 A
|
Drain-source On Resistance-Max |
6 Ω
|
8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.225 W
|
0.28 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SC-75A
|
Pin Count |
|
3
|
Samacsys Manufacturer |
|
Vishay
|
Additional Feature |
|
LOW THRESHOLD
|
Qualification Status |
|
Not Qualified
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare LBSS123LT1G with alternatives
Compare SI1031R-T1-GE3 with alternatives