LBSS123LT1G vs ZVP3306AM1 feature comparison

LBSS123LT1G LRC Leshan Radio Co Ltd

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ZVP3306AM1 Diodes Incorporated

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer LESHAN RADIO CO LTD DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3 E-LINE PACKAGE-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 60 V
Drain Current-Max (ID) 0.17 A 0.16 A
Drain-source On Resistance-Max 6 Ω 14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pin Count 3
Qualification Status Not Qualified
Transistor Application SWITCHING

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