LF155AT vs BM301AN feature comparison

LF155AT Raytheon Semiconductor

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BM301AN Baneasa SA

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR BANEASA S A
Package Description , CAN8,.2 DIP,
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.025 µA 0.25 µA
Bias Current-Max (IIB) @25C 0.00005 µA
Common-mode Reject Ratio-Nom 100 dB 96 dB
Frequency Compensation YES
Input Offset Voltage-Max 2500 µV 7500 µV
JESD-30 Code O-MBCY-W8 R-PDIP-T8
JESD-609 Code e0
Low-Bias YES
Low-Offset NO
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Package Body Material METAL PLASTIC/EPOXY
Package Equivalence Code CAN8,.2
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL IN-LINE
Qualification Status Not Qualified Not Qualified
Slew Rate-Min 3 V/us
Slew Rate-Nom 6 V/us 0.5 V/us
Supply Current-Max 4 mA
Supply Voltage Limit-Max 22 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Technology BIPOLAR
Temperature Grade MILITARY COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form WIRE THROUGH-HOLE
Terminal Position BOTTOM DUAL
Unity Gain BW-Nom 6000 1000
Voltage Gain-Min 25000
Base Number Matches 5 1
Part Package Code DIP
Pin Count 8
ECCN Code EAR99
HTS Code 8542.33.00.01
Package Code DIP

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