LM13700AN vs NE5517N feature comparison

LM13700AN Rochester Electronics LLC

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NE5517N NXP Semiconductors

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Pbfree Code Yes
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Part Package Code DIP DIP
Package Description PLASTIC, DIP16 0.300 INCH, PLASTIC, SOT38-4, DIP-16
Pin Count 16 16
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Average Bias Current-Max (IIB) 7 µA 8 µA
Common-mode Reject Ratio-Nom 110 dB 110 dB
Input Offset Voltage-Max 2000 µV 5000 µV
JESD-30 Code R-PDIP-T16 R-PDIP-T16
JESD-609 Code e0
Length 21.755 mm 19.025 mm
Moisture Sensitivity Level NOT SPECIFIED 1
Neg Supply Voltage Limit-Max -22 V -22 V
Neg Supply Voltage-Nom (Vsup) -15 V -15 V
Number of Functions 2 2
Number of Terminals 16 16
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 5.08 mm 4.2 mm
Slew Rate-Nom 50 V/us 50 V/us
Supply Voltage Limit-Max 22 V 22 V
Supply Voltage-Nom (Vsup) 15 V 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Unity Gain BW-Nom 2000 2000
Width 7.62 mm 7.62 mm
Base Number Matches 3 3
ECCN Code EAR99
HTS Code 8542.33.00.01
Architecture TRANSCONDUCTANCE
Bias Current-Max (IIB) @25C 5 µA
Frequency Compensation YES
Low-Offset NO
Package Equivalence Code DIP16,.3
Qualification Status Not Qualified
Supply Current-Max 4 mA

Compare LM13700AN with alternatives

Compare NE5517N with alternatives