LM258D vs LM258NG feature comparison

LM258D Samsung Semiconductor

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LM258NG onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ONSEMI
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.15 µA 0.15 µA
Frequency Compensation YES NO
Input Offset Voltage-Max 7000 µV 5000 µV
JESD-30 Code R-PDSO-G8 R-PDIP-T8
JESD-609 Code e0 e3
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code SOP DIP
Package Equivalence Code SOP8,.25 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2 mA 3 mA
Supply Voltage Limit-Max 16 V 32 V
Surface Mount YES NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER OTHER
Terminal Finish Tin/Lead (Sn/Pb) Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Pitch 1.27 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000 25000
Base Number Matches 10 1
Pbfree Code Yes
Part Package Code 8 LEAD PDIP
Package Description DIP-8
Pin Count 8
Manufacturer Package Code 626-05
Samacsys Manufacturer onsemi
Average Bias Current-Max (IIB) 0.3 µA
Common-mode Reject Ratio-Min 70 dB
Common-mode Reject Ratio-Nom 85 dB
Input Offset Current-Max (IIO) 0.03 µA
Length 9.27 mm
Low-Bias NO
Micropower NO
Packing Method RAIL
Peak Reflow Temperature (Cel) 260
Power NO
Programmable Power NO
Seated Height-Max 5.33 mm
Slew Rate-Nom 0.6 V/us
Supply Voltage-Nom (Vsup) 5 V
Time@Peak Reflow Temperature-Max (s) 40
Unity Gain BW-Nom 1000
Wideband NO
Width 7.62 mm

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