LM258DR2
vs
LM258NG
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
ONSEMI
|
| Package Description |
PLASTIC, SO-8
|
DIP-8
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.33.00.01
|
8542.33.00.01
|
| Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
| Average Bias Current-Max (IIB) |
0.3 µA
|
0.3 µA
|
| Common-mode Reject Ratio-Min |
70 dB
|
70 dB
|
| Common-mode Reject Ratio-Nom |
85 dB
|
85 dB
|
| Input Offset Voltage-Max |
5000 µV
|
5000 µV
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDIP-T8
|
| JESD-609 Code |
e0
|
e3
|
| Length |
4.9 mm
|
9.27 mm
|
| Neg Supply Voltage-Nom (Vsup) |
|
|
| Number of Functions |
2
|
2
|
| Number of Terminals |
8
|
8
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-25 °C
|
-25 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.75 mm
|
5.33 mm
|
| Slew Rate-Nom |
0.6 V/us
|
0.6 V/us
|
| Supply Current-Max |
3 mA
|
3 mA
|
| Supply Voltage Limit-Max |
32 V
|
32 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Pitch |
1.27 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Unity Gain BW-Nom |
1000
|
1000
|
| Voltage Gain-Min |
25000
|
25000
|
| Width |
3.9 mm
|
7.62 mm
|
| Base Number Matches |
5
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
8 LEAD PDIP
|
| Pin Count |
|
8
|
| Manufacturer Package Code |
|
626-05
|
| Samacsys Manufacturer |
|
onsemi
|
| Architecture |
|
VOLTAGE-FEEDBACK
|
| Bias Current-Max (IIB) @25C |
|
0.15 µA
|
| Frequency Compensation |
|
NO
|
| Input Offset Current-Max (IIO) |
|
0.03 µA
|
| Low-Bias |
|
NO
|
| Low-Offset |
|
NO
|
| Micropower |
|
NO
|
| Package Equivalence Code |
|
DIP8,.3
|
| Packing Method |
|
RAIL
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power |
|
NO
|
| Programmable Power |
|
NO
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
| Wideband |
|
NO
|
|
|
|
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