LM2901MWA
vs
LM193FE883B
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NXP SEMICONDUCTORS
|
| Part Package Code |
WAFER
|
DIP
|
| Package Description |
DIE, DIE OR CHIP
|
DIP,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Amplifier Type |
COMPARATOR
|
COMPARATOR
|
| Average Bias Current-Max (IIB) |
0.5 µA
|
0.3 µA
|
| Bias Current-Max (IIB) @25C |
0.25 µA
|
|
| Input Offset Voltage-Max |
15000 µV
|
10000 µV
|
| JESD-30 Code |
X-XUUC-N
|
R-GDIP-T8
|
| Moisture Sensitivity Level |
1
|
|
| Neg Supply Voltage Limit-Max |
|
|
| Neg Supply Voltage-Nom (Vsup) |
|
|
| Number of Functions |
4
|
2
|
| Operating Temperature-Max |
85 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-55 °C
|
| Output Type |
OPEN-COLLECTOR
|
OPEN-COLLECTOR
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIE
|
DIP
|
| Package Equivalence Code |
DIE OR CHIP
|
DIP8,.3
|
| Package Shape |
UNSPECIFIED
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Response Time-Nom |
1300 ns
|
1300 ns
|
| Supply Current-Max |
2.5 mA
|
|
| Supply Voltage Limit-Max |
36 V
|
36 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
INDUSTRIAL
|
MILITARY
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
UPPER
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
8
|
| Length |
|
9.955 mm
|
| Number of Terminals |
|
8
|
| Screening Level |
|
MIL-STD-883 Class B
|
| Seated Height-Max |
|
5.08 mm
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
7.62 mm
|
|
|
|
Compare LM2901MWA with alternatives
Compare LM193FE883B with alternatives