M5M51008DFP-55HIBT
vs
K6X1008C2D-PF55T00
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
RENESAS TECHNOLOGY CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
SOIC
|
TSOP1
|
| Package Description |
0.525 INCH, ROHS COMPLIANT, SOP-32
|
8 X 20 MM, LEAD FREE, TSOP1-32
|
| Pin Count |
32
|
32
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
55 ns
|
55 ns
|
| JESD-30 Code |
R-PDSO-G32
|
R-PDSO-G32
|
| Length |
20.75 mm
|
18.4 mm
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
131072 words
|
131072 words
|
| Number of Words Code |
128000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
128KX8
|
128KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
TSOP1
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE, THIN PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
3.05 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
0.5 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
11.4 mm
|
8 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare M5M51008DFP-55HIBT with alternatives
Compare K6X1008C2D-PF55T00 with alternatives