MBR1050CT-PBF vs HER1001GC0G feature comparison

MBR1050CT-PBF Digitron Semiconductors

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HER1001GC0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIGITRON SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE EFFICIENCY
Case Connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V 1 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 5 A 5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 100 µA 10 µA
Reverse Test Voltage 50 V
Surface Mount NO NO
Technology SCHOTTKY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reverse Recovery Time-Max 0.05 µs
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare MBR1050CT-PBF with alternatives

Compare HER1001GC0G with alternatives