MBR5150 vs MBR5150_B0_10001 feature comparison

MBR5150 Sangdest Microelectronics (Nanjing) Co Ltd

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MBR5150_B0_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PSFM-T2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE FREE WHEELING DIODE, LOW POWER LOSS
Breakdown Voltage-Min 150 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.93 V 0.9 V
JEDEC-95 Code TO-220AC DO-201AD
JESD-30 Code R-PSFM-T2 O-PALF-W2
Non-rep Pk Forward Current-Max 100 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 5 A 5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style FLANGE MOUNT LONG FORM
Rep Pk Reverse Voltage-Max 150 V 150 V
Reverse Current-Max 1000 µA 50 µA
Reverse Test Voltage 150 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE AXIAL
Base Number Matches 2 1
Application EFFICIENCY
Case Connection ISOLATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 2.5 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MBR5150 with alternatives

Compare MBR5150_B0_10001 with alternatives