MBR60100CT vs MBR60H100CTG feature comparison

MBR60100CT Galaxy Microelectronics

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MBR60H100CTG onsemi

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ONSEMI
Reach Compliance Code unknown not_compliant
Application GENERAL PURPOSE EFFICIENCY
Breakdown Voltage-Min 100 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V 0.72 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 300 A 350 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 30 A 30 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code TO-220 3 LEAD STANDARD
Package Description CASE 221A-09, 3 PIN
Pin Count 3
Manufacturer Package Code 221A
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW POWER LOSS
Case Connection CATHODE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40

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