MBR60100CT vs MBRB60H100CTT4G feature comparison

MBR60100CT Galaxy Microelectronics

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MBRB60H100CTT4G onsemi

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Part Life Cycle Code Active End Of Life
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ONSEMI
Reach Compliance Code unknown not_compliant
Application GENERAL PURPOSE EFFICIENCY
Breakdown Voltage-Min 100 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V 0.72 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 300 A 350 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 30 A 30 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V
Surface Mount NO YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 61 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW POWER LOSS
Case Connection CATHODE
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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