MBRD835LT4
vs
SBRD8835LT4G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Lifetime Buy
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
ONSEMI
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.51 V
|
0.51 V
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
75 A
|
75 A
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Rep Pk Reverse Voltage-Max |
35 V
|
35 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Base Number Matches |
4
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DPAK (SINGLE GAUGE) TO-252
|
| Package Description |
|
DPAK-3/2
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
369C
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Samacsys Manufacturer |
|
onsemi
|
| Additional Feature |
|
FREE WHEELING DIODE
|
| Application |
|
POWER
|
| Case Connection |
|
CATHODE
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
AEC-Q101
|
| Reverse Current-Max |
|
1400 µA
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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