MG150Q2YS11
vs
MG150Q2YS91
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
FLANGE MOUNT, R-PUFM-X7
|
FLANGE MOUNT, R-PUFM-X7
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
150 A
|
150 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
1000 ns
|
|
| Gate-Emitter Voltage-Max |
20 V
|
|
| JESD-30 Code |
R-PUFM-X7
|
R-PUFM-X7
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
7
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1100 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
2.7 V
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare MG150Q2YS11 with alternatives
Compare MG150Q2YS91 with alternatives