MG75Q2YS11
vs
2MBI50L-120
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
FUJI ELECTRIC CO LTD
|
Package Description |
FLANGE MOUNT, R-PUFM-X7
|
FLANGE MOUNT, R-XUFM-X7
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
75 A
|
50 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
1000 ns
|
500 ns
|
Gate-Emitter Voltage-Max |
20 V
|
|
JESD-30 Code |
R-PUFM-X7
|
R-XUFM-X7
|
Number of Elements |
2
|
2
|
Number of Terminals |
7
|
7
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
600 W
|
400 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
VCEsat-Max |
2.7 V
|
3.5 V
|
Base Number Matches |
1
|
1
|
Pin Count |
|
7
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
HIGH SPEED SWITCHING
|
Power Dissipation Ambient-Max |
|
800 W
|
|
|
|
Compare MG75Q2YS11 with alternatives
Compare 2MBI50L-120 with alternatives