MGF0920A
vs
MGF0920A-03
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP
|
MITSUBISHI ELECTRIC CORP
|
Package Description |
CHIP CARRIER, R-CQCC-N3
|
CHIP CARRIER, R-CQCC-N3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.75
|
8541.29.00.75
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
10 V
|
10 V
|
Drain Current-Max (ID) |
0.4 A
|
0.4 A
|
FET Technology |
JUNCTION
|
JUNCTION
|
Highest Frequency Band |
S BAND
|
S BAND
|
JESD-30 Code |
R-CQCC-N3
|
R-CQCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
8.3 W
|
8.3 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
3
|
1
|
|
|
|