MJD112
vs
NJVMJD112G
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
ONSEMI
|
| Part Package Code |
TO-251/252
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Base Number Matches |
12
|
1
|
| Pbfree Code |
|
Yes
|
| Package Description |
|
DPAK-3/2
|
| Manufacturer Package Code |
|
369C
|
| Factory Lead Time |
|
59 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Collector Current-Max (IC) |
|
2 A
|
| Configuration |
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
|
1000
|
| JESD-30 Code |
|
R-PSSO-G2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Reference Standard |
|
AEC-Q101
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
25 MHz
|
|
|
|
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