MJD122
vs
MJD122T4
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
MOTOROLA INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
8 A
|
8 A
|
| Configuration |
DARLINGTON
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
1000
|
100
|
| JESD-609 Code |
e0
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
15
|
4
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G2
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
COLLECTOR
|
| Collector-Base Capacitance-Max |
|
200 pF
|
| Collector-Emitter Voltage-Max |
|
100 V
|
| JESD-30 Code |
|
R-PDSO-G2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
20 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
4 MHz
|
| Turn-off Time-Max (toff) |
|
3500 ns
|
| VCEsat-Max |
|
4 V
|
|
|
|
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