MJD32
vs
BCP55-10
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SIEMENS A G
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
3 A
|
1 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
10
|
63
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
140 °C
|
150 °C
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
15 W
|
1.5 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Transition Frequency-Nom (fT) |
3 MHz
|
100 MHz
|
| Base Number Matches |
6
|
13
|
| HTS Code |
|
8541.29.00.75
|
| Case Connection |
|
COLLECTOR
|
| Collector-Emitter Voltage-Max |
|
60 V
|
| JESD-30 Code |
|
R-PDSO-G4
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
1.5 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
0.5 V
|
|
|
|
Compare BCP55-10 with alternatives