MJD45H11T4
vs
NJVMJD45H11T4G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
ONSEMI
|
| Package Description |
,
|
DPAK-3/2
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Collector Current-Max (IC) |
8 A
|
8 A
|
| Configuration |
Single
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
40
|
| Operating Temperature-Max |
140 °C
|
150 °C
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
20 W
|
20 W
|
| Surface Mount |
YES
|
YES
|
| Transition Frequency-Nom (fT) |
40 MHz
|
90 MHz
|
| Base Number Matches |
5
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DPAK (SINGLE GAUGE) TO-252
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
369C
|
| ECCN Code |
|
EAR99
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
onsemi
|
| Case Connection |
|
COLLECTOR
|
| Collector-Emitter Voltage-Max |
|
80 V
|
| JESD-30 Code |
|
R-PSSO-G2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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