MJD6036
vs
MJD112
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
4 A
|
|
| Collector-Base Capacitance-Max |
200 pF
|
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
|
| DC Current Gain-Min (hFE) |
500
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
25 MHz
|
|
| Turn-off Time-Max (toff) |
2900 ns
|
|
| VCEsat-Max |
2.5 V
|
|
| Base Number Matches |
4
|
12
|
| Part Package Code |
|
TO-251/252
|
|
|
|
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