MJE802
vs
BUT11
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
TO-225
|
SFM
|
| Package Description |
PLASTIC, CASE 77-09, 3 PIN
|
TO-220, 3 PIN
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
CASE 77-09
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
BUILT IN BIAS RESISTOR
|
|
| Collector Current-Max (IC) |
4 A
|
5 A
|
| Collector-Emitter Voltage-Max |
80 V
|
400 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
750
|
10
|
| JEDEC-95 Code |
TO-225
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
240
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
1 MHz
|
|
| Base Number Matches |
2
|
2
|
| ECCN Code |
|
EAR99
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
100 W
|
|
|
|
Compare MJE802 with alternatives
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