MJE802
vs
MJE802G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
ONSEMI
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
onsemi
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
4 A
|
4 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
100
|
750
|
| JEDEC-95 Code |
TO-126
|
TO-225
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
40 W
|
|
| Power Dissipation-Max (Abs) |
40 W
|
40 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
1 MHz
|
1 MHz
|
| VCEsat-Max |
2.5 V
|
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
TO-225
|
| Package Description |
|
ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
77-09
|
| Additional Feature |
|
BUILT IN BIAS RESISTOR
|
|
|
|