MMBD4448HSDW vs MMBD4448HSDW feature comparison

MMBD4448HSDW Galaxy Microelectronics

Buy Now Datasheet

MMBD4448HSDW Galaxy Microelectronics

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-363 SOT-363
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F6 R-PDSO-F6
Number of Elements 4 4
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Rep Pk Reverse Voltage-Max 80 V 80 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

Compare MMBD4448HSDW with alternatives

Compare MMBD4448HSDW with alternatives