MMBF170LT1 vs MMBF170LT3 feature comparison

MMBF170LT1 onsemi

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MMBF170LT3 Motorola Mobility LLC

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Pbfree Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description TO-236, CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.21.00.95
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.5 A 0.5 A
Drain-source On Resistance-Max 5 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Power Dissipation Ambient-Max 0.225 W

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