MMBR521L vs BF241D-AMMO feature comparison

MMBR521L Motorola Semiconductor Products

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BF241D-AMMO NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.07 A 0.025 A
Collector-Base Capacitance-Max 1.5 pF 0.5 pF
Collector-Emitter Voltage-Max 10 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 25 35
Highest Frequency Band S BAND
JEDEC-95 Code TO-236AB TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 0.333 W
Power Gain-Min (Gp) 8 dB
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 3400 MHz 150 MHz
Base Number Matches 3 1

Compare MMBR521L with alternatives

Compare BF241D-AMMO with alternatives