MMBT4403F2 vs MMBT4403 feature comparison

MMBT4403F2 Yangzhou Yangjie Electronics Co Ltd

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MMBT4403 Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.6 A 0.6 A
Collector-Emitter Voltage-Max 40 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 20
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Turn-off Time-Max (toff) 255 ns
Turn-on Time-Max (ton) 35 ns
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MMBT4403F2 with alternatives

Compare MMBT4403 with alternatives