MMBT918_R2_00001
vs
MPSH10RL
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
MOTOROLA INC
|
| Package Description |
,
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
3
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
EUROPEAN PART NUMBER
|
| Collector Current-Max (IC) |
|
0.1 A
|
| Collector-Base Capacitance-Max |
|
0.7 pF
|
| Collector-Emitter Voltage-Max |
|
25 V
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
60
|
| Highest Frequency Band |
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-30 Code |
|
O-PBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation Ambient-Max |
|
1 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
650 MHz
|
| VCEsat-Max |
|
0.5 V
|
|
|
|
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