MMBTH10 vs MMBTH10LT3G feature comparison

MMBTH10 Rochester Electronics LLC

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MMBTH10LT3G onsemi

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Pbfree Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ONSEMI
Reach Compliance Code unknown compliant
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 0.7 pF 0.7 pF
Collector-Emitter Voltage-Max 25 V 25 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 650 MHz 650 MHz
Base Number Matches 22 1
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description CASE 318-08, 3 PIN
Pin Count 3
Manufacturer Package Code 318-08
ECCN Code EAR99
Factory Lead Time 29 Weeks
Samacsys Manufacturer onsemi
DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-236
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.3 W

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