MMBZ5230B
vs
MMBZ5230B-GT1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
19 Ω
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Power Dissipation-Max |
0.35 W
|
0.35 W
|
| Reference Voltage-Nom |
4.7 V
|
4.7 V
|
| Surface Mount |
YES
|
YES
|
| Voltage Tol-Max |
5%
|
4.99%
|
| Working Test Current |
20 mA
|
20 mA
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
R-PDSO-G3
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Qualification Status |
|
Not Qualified
|
| Technology |
|
ZENER
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare MMBZ5230B with alternatives
Compare MMBZ5230B-GT1 with alternatives