MMDF2P01HDR2 vs FDFS6N303 feature comparison

MMDF2P01HDR2 Freescale Semiconductor

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FDFS6N303 Rochester Electronics LLC

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS ROCHESTER ELECTRONICS LLC
Package Description , SO-8
Reach Compliance Code unknown unknown
Drain Current-Max (Abs) (ID) 3.4 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES YES
Base Number Matches 5 2
Pbfree Code Yes
Part Package Code SOT
Pin Count 8
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.035 Ω
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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