Part Details for FDFS6N303 by Rochester Electronics LLC
Overview of FDFS6N303 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDFS6N303
FDFS6N303 CAD Models
FDFS6N303 Part Data Attributes:
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FDFS6N303
Rochester Electronics LLC
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Datasheet
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FDFS6N303
Rochester Electronics LLC
6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDFS6N303
This table gives cross-reference parts and alternative options found for FDFS6N303. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS6N303, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMDF2P03HDR2 | 2A, 30V, 0.22ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | FDFS6N303 vs MMDF2P03HDR2 |
| MMDF3N03HDR2 | 4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8 | Rochester Electronics LLC | FDFS6N303 vs MMDF3N03HDR2 |
| NDS8926 | 20V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Texas Instruments | FDFS6N303 vs NDS8926 |
| RF1K49090 | 3.5A, 12V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | FDFS6N303 vs RF1K49090 |
| MMDF2N02ER2 | 3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | FDFS6N303 vs MMDF2N02ER2 |
| HAT1036R | Power Field-Effect Transistor, 12A I(D), 30V, 0.034ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | FDFS6N303 vs HAT1036R |
| FDS4935A | 7A, 30V, 0.023ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FDFS6N303 vs FDS4935A |
| HAT1020R | Power Field-Effect Transistor, 5A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | FDFS6N303 vs HAT1020R |
| HAT2024R | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Hitachi Ltd | FDFS6N303 vs HAT2024R |
| HAT1038R | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.23ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | FDFS6N303 vs HAT1038R |