MR812
vs
1N4003GPPTR
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
CENTRAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
1.1 V
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.75 µs
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
6
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Application |
|
GENERAL PURPOSE
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-41
|
| JESD-30 Code |
|
O-XALF-W2
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
5 µA
|
| Reverse Test Voltage |
|
200 V
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N4003GPPTR with alternatives