MRF176GU
vs
BLF246B,112
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
NXP SEMICONDUCTORS
|
Package Description |
,
|
|
Reach Compliance Code |
unknown
|
unknown
|
Drain Current-Max (Abs) (ID) |
16 A
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Number of Elements |
1
|
2
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Power Dissipation-Max (Abs) |
400 W
|
130 W
|
Base Number Matches |
5
|
1
|
Part Package Code |
|
DFM
|
Pin Count |
|
2
|
Manufacturer Package Code |
|
SOT161A
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.75
|
Additional Feature |
|
HIGH RELIABILITY
|
Case Connection |
|
ISOLATED
|
Configuration |
|
COMMON SOURCE, 2 ELEMENTS
|
DS Breakdown Voltage-Min |
|
65 V
|
Drain Current-Max (ID) |
|
8 A
|
Drain-source On Resistance-Max |
|
0.75 Ω
|
Highest Frequency Band |
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code |
|
R-CDFM-F8
|
Number of Terminals |
|
8
|
Operating Mode |
|
ENHANCEMENT MODE
|
Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
|
130 W
|
Power Gain-Min (Gp) |
|
14 dB
|
Qualification Status |
|
Not Qualified
|
Surface Mount |
|
YES
|
Terminal Form |
|
FLAT
|
Terminal Position |
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
AMPLIFIER
|
Transistor Element Material |
|
SILICON
|
|
|
|
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