MRF648
vs
2SC3102
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
MITSUBISHI ELECTRIC CORP
|
| Package Description |
FLANGE MOUNT, O-CXFM-F4
|
FLANGE MOUNT, R-CDFM-F6
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
EMITTER
|
EMITTER
|
| Collector Current-Max (IC) |
11 A
|
18 A
|
| Collector-Base Capacitance-Max |
150 pF
|
|
| Collector-Emitter Voltage-Max |
16 V
|
17 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
10
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-CXFM-F4
|
R-CDFM-F6
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
6
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
175 W
|
170 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
UNSPECIFIED
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
2
|
| Pin Count |
|
6
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Power Dissipation Ambient-Max |
|
170 W
|
| Power Gain-Min (Gp) |
|
4.8 dB
|
|
|
|
Compare MRF648 with alternatives
Compare 2SC3102 with alternatives