MRF6S21050LR3
vs
MRF21085S
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MOTOROLA INC
|
| Package Description |
,
|
FLATPACK, R-CDFP-F2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
3
|
| Case Connection |
|
SOURCE
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
65 V
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
|
S BAND
|
| JESD-30 Code |
|
R-CDFP-F2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
200 °C
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLATPACK
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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