MRF8HP21080HSR3
vs
A2T21H100-25SR3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
FLATPACK, R-CDFP-F4
|
,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00
|
| Case Connection |
SOURCE
|
|
| Configuration |
COMMON SOURCE, 2 ELEMENTS
|
|
| DS Breakdown Voltage-Min |
65 V
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Highest Frequency Band |
S BAND
|
|
| JESD-30 Code |
R-CDFP-F4
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
4
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
225 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLATPACK
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
10 Weeks
|
| Samacsys Manufacturer |
|
NXP
|
|
|
|
Compare MRF8HP21080HSR3 with alternatives
Compare A2T21H100-25SR3 with alternatives