MRF8HP21080HSR3 vs MRF6S21100HSR3 feature comparison

MRF8HP21080HSR3 NXP Semiconductors

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MRF6S21100HSR3 Motorola Mobility LLC

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MOTOROLA INC
Package Description FLATPACK, R-CDFP-F4 FLATPACK, R-CDFP-F2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS SINGLE
DS Breakdown Voltage-Min 65 V 68 V
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND S BAND
JESD-30 Code R-CDFP-F4 R-CDFP-F2
Number of Elements 2 1
Number of Terminals 4 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 225 °C 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLATPACK FLATPACK
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 2
Manufacturer Package Code CASE 465A-06
Power Dissipation-Max (Abs) 388 W

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