MRF8P20140WHSR3
vs
MRF6S19060NR1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
FLATPACK, R-CDFP-F4
|
ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00
|
8541.29.00.75
|
| Factory Lead Time |
26 Weeks
|
4 Weeks
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
COMMON SOURCE, 2 ELEMENTS
|
SINGLE
|
| DS Breakdown Voltage-Min |
65 V
|
68 V
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
S BAND
|
L BAND
|
| JESD-30 Code |
R-CDFP-F4
|
R-PDFP-F4
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
125 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLATPACK
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-270
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare MRF8P20140WHSR3 with alternatives
Compare MRF6S19060NR1 with alternatives