MSC080SMA120B4
vs
MSC080SMA120S
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2019-09-20
|
|
| Samacsys Manufacturer |
Microsemi Corporation
|
Microchip
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
| Drain Current-Max (ID) |
37 A
|
35 A
|
| Drain-source On Resistance-Max |
0.1 Ω
|
0.1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247
|
TO-268AA
|
| JESD-30 Code |
R-PSFM-T4
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
200 W
|
182 W
|
| Pulsed Drain Current-Max (IDM) |
90 A
|
87 A
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
TO-268, D3PAK-3/2
|
| HTS Code |
|
8541.29.00.95
|
| Factory Lead Time |
|
14 Weeks, 1 Day
|
| Feedback Cap-Max (Crss) |
|
9 pF
|
|
|
|
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