MSD601-RT1
vs
BC849-C
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA INC
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
25 V
|
30 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
210
|
420
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
150 MHz
|
300 MHz
|
VCEsat-Max |
0.5 V
|
|
Base Number Matches |
5
|
4
|
Part Package Code |
|
SOT-23
|
Pin Count |
|
3
|
Additional Feature |
|
LOW NOISE
|
|
|
|
Compare MSD601-RT1 with alternatives
Compare BC849-C with alternatives