MTD3055V-1 vs IRFR1205TRPBF feature comparison

MTD3055V-1 onsemi

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IRFR1205TRPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Manufacturer Package Code CASE 369D-01
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 72 mJ 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 12 A 20 A
Drain-source On Resistance-Max 0.15 Ω 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 48 W 107 W
Pulsed Drain Current-Max (IDM) 37 A 160 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
JEDEC-95 Code TO-252AA
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare MTD3055V-1 with alternatives

Compare IRFR1205TRPBF with alternatives