MTE215N10E
vs
APT10M07JVR
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
MICROSEMI CORP
|
| Package Description |
FLANGE MOUNT, R-PUFM-D4
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
400 mJ
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
215 A
|
225 A
|
| Drain-source On Resistance-Max |
0.0055 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PUFM-D4
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation Ambient-Max |
460 W
|
|
| Power Dissipation-Max (Abs) |
460 W
|
700 W
|
| Pulsed Drain Current-Max (IDM) |
860 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
SOLDER LUG
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
2
|
| Part Package Code |
|
ISOTOP
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
ISOTOP
|
|
|
|
Compare MTE215N10E with alternatives
Compare APT10M07JVR with alternatives